Researchers from Penn State have demonstrated a novel method of 3D integration using 2D materials. This advancement, detailed in their recent study, addresses the growing challenge of fitting more ...
Power delivery now spans stacked dies, interposers, bridges, and packages connected by thousands of micro-bumps and TSVs.
The Defense Advanced Research Projects Agency (DARPA) Microsystems Technology Office (MTO) is requesting information to guide the establishment of a domestic research and development (R&D) center for ...
A technology for the three-dimensional integration of processing units and memory, as reported by researchers from Tokyo Tech, has achieved the highest attainable performance in the whole world, ...
TOKYO--(BUSINESS WIRE)--OKI (TOKYO: 6703), in collaboration with Nisshinbo Micro Devices Inc. (Head office: Tokyo; President: Keiichi Yoshioka), has successfully achieved three-dimensional (3D) ...
The move toward 3D ICs and heterogeneous integration overcomes limitations of 2D scaling by integrating multiple specialized ...
Penn State researchers demonstrated 3D integration of semiconductors at a massive scale, characterizing tens of thousands of devices using 2D transistors made with 2D semiconductors, enabling ...
3D integrated circuits promise smaller, faster devices with lower power consumption. Vertically stacked 3D integrated circuits also enable novel in-memory and in-sensor computing paradigms and ...
Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, ...
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